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2N7002L Small Signal MOSFET
60 V, 115 mA, N-Channel SOT-23
Features
* Pb-Free Packages are Available
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 MW) Drain Current - Continuous TC = 25C (Note 1) - Continuous TC = 100C (Note 1) - Pulsed (Note 2) Gate-Source Voltage - Continuous - Non-repetitive (tp 50 ms) Symbol VDSS VDGR ID ID IDM Value 60 60 115 75 800 Unit Vdc Vdc mAdc 60 V V(BR)DSS
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RDS(on) MAX 7.5 W @ 10 V, 500 mA N-Channel 3 ID MAX
115 mA
VGS VGSM
20 40
Vdc Vpk
1
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
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THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (Note 3) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 RqJA TJ, Tstg 417 -55 to +150 C/W C 702 W Unit mW mW/C C/W mW mW/C
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MARKING DIAGRAM & PIN ASSIGNMENT
Drain
3 1 2
RqJA PD
SOT-23 CASE 318 STYLE 21
702 W
1 2
Gate = Device Code = Work Week
Source
1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 3. FR-5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device 2N7002LT1 2N7002LT3 2N7002LT1G 2N7002LT3G SOT-23 (Pb-free) Package SOT-23 Shipping 3000 Tape & Reel 10,000 Tape & Reel 3000 Tape & Reel 10,000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2004
1
July, 2004 - Rev. 2
Publication Order Number: 2N7002L/D
2N7002L
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 mAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate-Body Leakage Current, Forward (VGS = 20 Vdc) Gate-Body Leakage Current, Reverse (VGS = - 20 Vdc) ON CHARACTERISTICS (Note 5) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) On-State Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc) Static Drain-Source On-State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) Static Drain-Source On-State Resistance (VGS = 10 V, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Turn-Off Delay Time BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. VSD IS ISM - - - - - - -1.5 -115 -800 Vdc mAdc mAdc (VDD = 25 Vdc, ID ^ 500 mAdc, RG = 25 W, RL = 50 W, Vgen = 10 V) td(on) td(off) - - - - 20 40 ns ns Ciss Coss Crss - - - - - - 50 25 5.0 pF pF pF TC = 25C TC = 125C TC = 25C TC = 125C gFS VGS(th) ID(on) VDS(on) - - rDS(on) - - - - 80 - - - - - 7.5 13.5 7.5 13.5 - mmhos - - 3.75 0.375 Ohms 1.0 500 - - 2.5 - Vdc mA Vdc TJ = 25C TJ = 125C V(BR)DSS IDSS IGSSF IGSSR 60 - - - - - - - - - - 1.0 500 100 -100 Vdc mAdc nAdc nAdc Symbol Min Typ Max Unit
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2N7002L
TYPICAL ELECTRICAL CHARACTERISTICS
2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V 7V 6V 5V 4V 3V 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 0.8 0.6 0.4 0.2 1.0 VDS = 10 V -55 C 125C 25C
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VGS = 10 V ID = 200 mA
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
2.4
1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VDS = VGS ID = 1.0 mA
Figure 3. Temperature versus Static Drain-Source On-Resistance
Figure 4. Temperature versus Gate Threshold Voltage
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2N7002L
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AH
A L
3 1 2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
BS
V
G C D H K J
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
SOLDERING FOOTPRINT*
0.95 0.037
0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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2N7002L/D

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